FCO-6P-PJ | 2.0×1.6mm | Ultra Low Power Low Jitter FASTXO
SMD 2.0×1.6mm, 0.8ps typ, 25~40mA
FEATURE
Product Description
FCO‑6P‑PJ — 2.0×1.6 mm Programmable Low‑Power, Low‑Jitter CMOS Oscillator
Model: FCO‑6P‑PJ · Package: 2.0×1.6 mm · Output: CMOS · Supply: 1.8/2.5/3.3 V · Range: 1–200 MHz
- Ultra‑low RMS phase jitter: 0.8 ps typ (12 kHz–20 MHz @ 50 MHz); 1.5 ps max (Integer), 2.0 ps max (Fractional)
- Wide frequency coverage: 1–200 MHz with CMOS output
- Supply options: 1.8 V / 2.5 V / 3.3 V
- Frequency stability options: ±15 / ±20 / ±25 / ±50 ppm
- Tri‑state enable/disable; start‑up ≤8 ms; duty cycle 45–55%
- Designed for IoT, smartphones, wearables, game consoles and mobile devices
Overview
FCO‑6P‑PJ is a compact, programmable CMOS oscillator in a 2.0×1.6 mm footprint. It combines wide frequency coverage (1–200 MHz) with exceptionally low phase jitter for timing‑sensitive consumer and IoT designs. Multiple supply options (1.8/2.5/3.3 V), tight ppm stability choices, and tri‑state control make it a versatile drop‑in clock source for dense, battery‑powered systems.
Key Features
- RMS phase jitter: 0.8 ps typ (12 kHz–20 MHz @ 50 MHz)
- Frequency range: 1–200 MHz
- Supply voltage: 1.8 V / 2.5 V / 3.3 V
- Duty cycle: 45–55%
- Start‑up time: ≤8 ms
- Frequency stability options: ±15/±20/±25/±50 ppm
- Output load: 15 pF
- VDD sensitivity (±5%): ±2 ppm
- Aging (1st year @ 25°C): ±3 ppm
- Tri‑state thresholds: VIH ≥ 0.7×VDD (Enable), VIL ≤ 0.3×VDD (Disable)
Electrical Specifications
Unless otherwise noted: TA = 25 ± 5°C, RH = 40–70%, CL = 15 pF.
| Parameter | Symbol | Min | Typ | Max | Units / Notes |
|---|---|---|---|---|---|
| Frequency Range | F | 1 | — | 200 | MHz |
| Supply Voltage | VDD | — | 1.8 / 2.5 / 3.3 | — | V (typical options) |
| Output High / Low | VOH / VOL | 0.9×VDD | — | 0.1×VDD | CMOS levels (min / max) |
| RMS Phase Jitter (Integer) | PJ | — | 0.8 | 1.5 | ps, 12 kHz–20 MHz @ 50 MHz |
| RMS Phase Jitter (Fractional) | PJ | — | — | 2.0 | ps, 12 kHz–20 MHz @ 50 MHz |
| Duty Cycle | TH/T | 45 | 55 | % | |
| Start‑up Time | Tosc | — | — | 8 | ms |
| Output Load | CL | — | 15 | — | pF |
| VDD Sensitivity (±5%) | — | −2 | — | +2 | ppm |
| Aging (1st year) | — | — | ±3 | — | ppm @ 25°C |
| Tri‑State Input | VIH / VIL | 0.7×VDD (EN) | — | 0.3×VDD (DIS) | Pin 1 control |
| Current Consumption (Max, @ 15 pF) | ||||
|---|---|---|---|---|
| Frequency Band | 1.8 V | 2.5 V | 3.3 V | Units |
| 1 ≤ Fo < 30 MHz | 25 | 27 | 27 | mA |
| 30 ≤ Fo < 75 MHz | 25 | 27 | 27 | mA |
| 75 ≤ Fo < 125 MHz | 25 | 30 | 30 | mA |
| 125 ≤ Fo < 170 MHz | — | 35 | 35 | mA |
| 170 ≤ Fo ≤ 200 MHz | — | 35 | 40 | mA |
| Transition Time (10–90%) and Standby | |||
|---|---|---|---|
| Frequency Band | Tr/Tf (Max) | Standby Current (PD) | Standby Current (OE) |
| 1 ≤ Fo < 10 MHz | ≤4 ns | ≤400 μA | ≤25 mA |
| 10 ≤ Fo < 125 MHz | ≤3 ns | ||
| 125 ≤ Fo ≤ 200 MHz | ≤2 ns | ||
Frequency Stability vs Temperature Range
| Stability (ppm) | −20~+70°C | −40~+85°C | −40~+105°C | −40~+125°C |
|---|---|---|---|---|
| ±15 ppm | ○ | × | × | × |
| ±20 ppm | ○ | △ | △ | × |
| ±25 ppm | ○ | ○ | ○ | × |
| ±50 ppm | ○ | ○ | ○ | ○ |
Stability includes calibration at 25°C, operating temperature, input voltage variation, load variation, aging (1st year), shock and vibration.
Recommended Applications
- IoT and smart sensors
- Smartphones and tablets
- Wearable electronics
- Game consoles and accessories
- General mobile/portable devices

Design Tips
- Place a 0.1 μF bypass capacitor as close as possible between VDD and GND pads to ensure optimal performance.
- Keep the clock trace short and isolated from high‑slew switching nets to minimize crosstalk and jitter.
- Observe logic thresholds for tri‑state control: VIH ≥ 0.7×VDD (Enable), VIL ≤ 0.3×VDD (Disable).
- Verify total frequency error budget: ppm stability + VDD sensitivity (±2 ppm for ±5% VDD) + aging.
Related reading:
Resources & Next Steps
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FAQ
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